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APTGV30H60T3G
Full - Bridge NPT & Trench + Field Stop(R) IGBT Power module
Trench & Field Stop(R) IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80C
13 14
Application
CR3 Q3 11 10
Q1 18 19
CR1
* Solar converter Features
22 23 Q2
7 8 CR4 Q4
26 27
CR2
* Q2, Q4 FAST Non Punch Through (NPT) IGBT - Switching frequency up to 100 kHz - RBSOA & SCSOA rated - Low tail current * Q1, Q3 Trench & Field Stop IGBT(R) - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current * * * * Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring
4 3
29 15
30
31 R1
32 16
Top switches : Trench + Field Stop IGBT(R) Bottom switches : FAST NPT IGBT
28 27 26 25 29 30 23 22 20 19 18 16 15
Benefits Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * RoHS Compliant * * * *
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGV30H60T3G
All ratings @ Tj = 25C unless otherwise specified 1. Top switches 1.1 Top Trench + Field Stop IGBT(R) characteristics Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Max ratings 600 50 30 60 20 90 60A @ 550V Unit V A V W
Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 30A Tj = 150C VGE = VCE , IC = 400A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 300 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 30A RG = 10 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 30A RG = 10 Tj = 25C VGE = 15V Tj = 150C VBus = 300V IC = 30A Tj = 25C RG = 10 Tj = 150C Min Typ 1600 110 50 110 45 200 40 120 50 250 60 0.16 0.3 0.7 1.05 1.6 ns Max Unit pF
ns
mJ
June, 2007 2-9 APTGV30H60T3G - Rev 0
mJ
C/W
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APTGV30H60T3G
1.2 Top fast diode characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 25A IF = 50A IF = 25A IF = 25A VR = 400V di/dt =200A/s
Min 600
Typ
Max 25 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
25 1.8 2.2 1.6 30 175 55 485
2.2 V
Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance
ns nC 1.4
C/W
2. Bottom switches 2.1 Bottom Fast NPT IGBT characteristics Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 42 30 100 20 140 60A@500V Unit V A V W
Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 30A Tj = 125C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.45 6 400 Unit A V V nA
June, 2007
1.7 4
2.0 2.2
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APTGV30H60T3G
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =30A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 30A RG = 6.8 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 30A RG = 6.8 VGE = 15V Tj = 125C VBus = 400V IC = 30A Tj = 125C RG = 6.8 Min Typ 1350 193 120 99 10 60 30 12 80 15 32 12 90 21 0.3 mJ 0.8 0.9
C/W
Max
Unit pF
nC
ns
ns
2.2 Bottom diode characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 15A IF = 30A IF = 15A IF = 15A VR = 400V di/dt =200A/s
Min 600
Typ
Max 150 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
15 1.6 1.9 1.4 40 150 95 520
1.8 V
trr Qrr RthJC
Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance
ns nC 2.0
C/W
RT =
R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
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APTGV30H60T3G - Rev 0
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
Min
Typ 50 3952
Max
Unit k K
June, 2007
3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
APTGV30H60T3G
4. Package characteristics
Symbol VISOL TJ TSTG TC Torque Wt Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Min 2500 -40 -40 -40 2.5
Typ
Max 150* 125 100 4.7 110
Unit V C N.m g
Tj=175C for Trench & Field Stop IGBT
5. SP3 Package outline (dimensions in mm)
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
6. Top switches curves 6.1 Top Trench + Field Stop IGBT(R) typical performance curves
Output Characteristics (VGE=15V) Output Characteristics 60
TJ = 150C VGE=19V
60
TJ=25C
50
TJ=125C
IC (A)
40 30 20 10 0 0 0.5 1
TJ=25C
IC (A)
TJ=150C
20
VGE=9V
10 0
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
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17 12
28
50 40 30
VGE=13V VGE=15V
APTGV30H60T3G
60 50 40 E (mJ) IC (A) 30 20 10
TJ=25C TJ=125C TJ=150C
Transfert Characteristics 2
TJ=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 10 TJ = 150C
1.5 1 0.5 0 11 12 0
Eoff
Eon
0 5 6 7 8 9 10 VGE (V) Switching Energy Losses vs Gate Resistance 2.5 2 E (mJ) 1.5 1 0.5
Eon
10
20
30 IC (A)
40
50
60
Reverse Bias Safe Operating Area 70 60 50 IC (A) 40 30 20 10 0
VGE=15V TJ=150C RG=10
VCE = 300V VGE =15V IC = 30A TJ = 150C
Eon
Eoff
0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70
0
100
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.8 Thermal Impedance (C/W) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
6.2 Top Fast diode typical performance curves
Forw ard Current vs Forw ard Voltage 80 IF, Forward Current (A) 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V F, Anode to Cathode Voltage (V)
T J=25C T J=-55C T J=1 25C
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.6 Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0.00001
0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
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0.9
APTGV30H60T3G
7. Bottom switches curves 7.1 Bottom fast NPT IGBT typical performance curves
Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 100 Ic, Collector Current (A)
TJ=-55C 250s Pulse Test < 0.5% Duty cycle
TJ=-55C
120 Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
90
TJ=25C
75
TJ=25C
60
TJ=125C
50
30
25
TJ=125C
0 0 1 2 3 4
VCE, Collector to Emitter Voltage (V) Transfer Characteristics 100 VGE, Gate to Emitter Voltage (V)
0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge
IC = 30A TJ = 25C VCE=120V VCE=300V VCE=480V
4
18
250s Pulse Test < 0.5% Duty cycle
Ic, Collector Current (A)
16 14 12 10 8 6 4 2 0 0
75
50
25
TJ=25C
TJ=125C TJ=-55C
0 0 1 2
3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V)
10
20
40
60
80
100
120
Gate Charge (nC) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125
Ic=15A 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=30A Ic=60A
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 8 10 12
Ic=15A Ic=30A TJ = 25C 250s Pulse Test < 0.5% Duty cycle Ic=60A
14
16
VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 Ic, DC Collector Current (A) 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C)
DC Collector Current vs Case Temperature
60 50 40 30
10 0 -50 -25 0 25 50 75 100 125 150
TC, Case Temperature (C)
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APTGV30H60T3G - Rev 0
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20
APTGV30H60T3G
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 50 125 Turn-Off Delay Time vs Collector Current
40
VGE = 15V
100
VGE=15V, TJ=25C
VGE=15V, TJ=125C
30
Tj = 125C VCE = 400V RG = 6.8
75
20
50
VCE = 400V RG = 6.8
10 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 50 40 30 20 10 0 0 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) 70
VGE=15V, TJ=125C VCE = 400V RG = 6.8
25 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
50 40
tf, Fall Time (ns)
tr, Rise Time (ns)
30
TJ = 125C
20
TJ = 25C
10
VCE = 400V, VGE = 15V, RG = 6.8
0 0 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) 70
Eoff, Turn-off Energy Loss (mJ)
Turn-On Energy Loss vs Collector Current 1 Eon, Turn-On Energy Loss (mJ)
VCE = 400V RG = 6.8 TJ=125C, VGE=15V
2
Turn-Off Energy Loss vs Collector Current
VCE = 400V VGE = 15V RG = 6.8 TJ = 125C
0.75 0.5 0.25 0 0
1.5
1
0.5
0 0 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 70
10
20
30
40
50
60
70
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 1 Switching Energy Losses (mJ) IC, Collector Current (A)
Eoff, 30A
60 50 40 30
0.75
Eon, 30A
0.5
10 0 0 100 200 300 400 500 600
0 0 5 10 15 20 Gate Resistance (Ohms) 25
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APTGV30H60T3G - Rev 0
VCE, Collector to Emitter Voltage (V)
June, 2007
0.25
VCE = 400V VGE = 15V TJ= 125C
20
APTGV30H60T3G
Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000 C, Capacitance (pF)
Cies
Operating Frequency vs Collector Current
280 240 200 160 120 80 40 0 0 10 20 30
hard switching ZVS
1000
Coes
VCE = 400V D = 50% RG = 6.8 TJ = 125C TC= 75C ZCS
100
Cres
10 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V)
40
50
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 Single Pulse
0 0.00001
7.2 Bottom diode typical performance curves
Forw ard Current vs Forw ard Voltage 60 IF, Forward Current (A) 50 40 30
T J=25C T J=1 25C
20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V F, Anode to Cathode Voltage (V)
T J=-55C
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 2.4 Thermal Impedance (C/W) 2 1.6 1.2 0.8 0.4 0 0.00001 0.9 0.7 0.5 0.3
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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0.1 0.05
Single Pulse

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